International scientific society has carried out the Conference Beam Injection Assessment of Microstructure in Semiconductors during 17 years starting from 1988. During this period the Conference was held in France (1988, 1991, and 2003), Italy (1993), Spain (1993, 1996), Germany (1998), Japan (2000). Appearance of these Conferences was due to the extremely intensive development of Hi-Tech for micro- nano- and optoelectronics and corresponding progress of characterization nondestructive local techniques caused by and adequate to this global event. At the same time the development of techniques based on the fine electron, photon, x-ray, ion, atomic, molecular beams and metallic nanoprobes is performed in the World. This is the scanning and transmission electron microscopy, tunneling, atomic-force and confocal microscopy, x-ray ion microanalysis, Auger and photoelectron spectroscopy, etc. Definitely these techniques are widely used, developed and specialized for characterization of nanomaterials, structures and devices for advanced electronics at any stage of fabrication.

Conference Dates

11 June - 15 June 2006

The scope of the workshop is to provide a forum for the presentation and discussion of the latest theoretical and experimental developments in the area of defects and microstructures assessment in semiconductors by beam injection and related methods.

Topics of interest include, but are not limited to:

11 June

9⁰⁰ Registration

10⁰⁰ Beginning of conference

Characterization Methods

electron beam: cathodoluminescence, EBIC, SDLTS, STEM
light: Spatially resolved PL, LBIC, RAMAN, SIRM
SPM: STM, Photon-STM, AFM, scanning Kelvin microscopy, scanning capacitance microscopy, BEEM
Near-field : NFOM
Ion beam : SIMS, FIB, IBIC

For characterization semiconductors and nano-structures and in general any quantitative and analytical aspect of local beam injection assessment of defects and nano-structures in semiconductors. Special attention will be paid to the application of beam injection techniques related to problems in advanced semiconductor technologies, including process control and failure analysis.

The workshop will consist of invited and contributed papers and poster sessions.

The official language of the workshop is English.

The workshop will act as a forum for interaction between physicists and technologists working in this field in both fundamental research and industrial applications.

Location

Saint-Peterburg, Russia

The conference will be held at A. F. Ioffe Physico-Technical institute of RAS and Join Research center Material since and characterization in the advanced technologies.

The new characterization conglomerate supported by the new characterization equipment is developed. This conglomerate includes to itself the x-ray diffraction methods, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, scanning tunnel and atom-force spectroscopy, secondary-ion microscopy, Auger-spectroscopy, local cathodoluminescence, as well as the electrophysical characterization methods.

Among the equipment the Center has the transmission electron microscope JEM-2100F (Jeol), secondary-ion microzonde-microscope IMS7F Cameca, UHV scanning tunnel microscope. At present the new hi-resolution x-ray station D8 Discover (Bruker) is under starting as well as several more.

Hotels

Conference will be held in St- Peterburg, Russia. Participants will be placed in hotels:
1. Hotel "Moskow" in historical centre of the city on the bank of Neva river. (Pl Alexandra Nevskogo, 2)
2. Hotel "Sputnik" situated in 15-20 minutes from the place of conference location (pr. Toreza, 36)

Hotel reservation. Choose the hotel you want to live in and make the pre-registration before the 1st of May.

HOTELS. Cost in EURO

	Name	SNGL	DBL	Apartment for3 Persones	Apartment for4 Persones	Payment condition
1	"Moskow" 3+, business floor	135	175	-	-	Cashless settlement before the 1st of May
2	"Sputnik" 3*	67	73	78	111	Registration before the 1st of May. Payment upon one's arrival

Transfer

1. Reservation of car from airport to hotel — 50 euro, pay to driver
To hotel "Sputnik"
From airport to the underground station "Moskovskaya" (line №2) by bus №39 (30 rub), by underground from station "Moskovskaya" to station "Tehnologicheskiy Institut 2", change line from №2 to №1, from station "Tehnologicheskiy Institut 1" to "Ploshchad Muzhestva". From underground station, hotel is located in two stations by trolleybus №13, bus №9 or №123
To hotel "Moskow"

From airport to the underground station "Moskovskaya" (line №2) by bus №39 (30 rub), by underground from station "Moskovskaya" to station "Sennaya Ploshchad", change line from №2 to №4, from station "Sadovaya" to "Ploshchad Alexandra Nevskogo"

Registration Fee

	Before the 1st of May	After the 1st of May
Participants	500€	600€
Accompanying persons	250€	300€

The fee of participant includes:

Visa support
Proceeding
Lunch
Banquet in one of private palaces of Saint-Petersburg
Excursion program

Evening round-up tour of the city (by bus — 3 hours)
Visit to museum-reserve "Petergof" and one of small palaces, including lunch (by bus — 8 hours)

The fee of accompanying persons includes:

Visa support
Banquet in one of private palaces
Excursion program in English language:

Evening round-up tour of the city (by bus — 3 hours)
Visit to museum-reserve "Petergof" and one of small palaces, including lunch (by bus — 8 hours)
Visit to museum-reserve "Pushkin" (with visit to Amber Room) and "Pavlovsk" with visit to Catherine and Pavlovsk
palaces (by bus — 8 hours)
Excursion to Peter-and-Paul Fortress and Peter-and-Paul Cathedral, earl Usupov's family
Palace and museum of mosaic art "Saviour on Blood" (by bus — 5 hours)
Excursion Russian museum and walk on motor ship by river Neva

Visa Support

A foreigner traveling to Russia must have a valid passport and an appropriate visa.
To get the visa, a visitor has to submit to the Russian Embassy or Consulate an official letter of invitation authorized by the Russian Ministry of Foreign Affairs.
Each foreign participant (and accompanying person) must send information by mail biams06@gmail.com before the 1st of May.

Information for getting visa:

Family name
Fist name
Date of birth
Sex
Citizenship (nationality), if you have more than one citizenship, write them all
Place of born, country, exact place of born
Country of permanent residence (Region), country, region in country of permanent residence
Place of getting visa, county, city where Russian consular office is situated
Place of employment, long title of organization (firm)
Address of pace of employment, long address of organization (firm)
Post, post in place of employment
Passport's number

data of delivery
valid to

Address of assumed residence, country, city, street, house
Phone, assumed number of phone with code of city (10 symbols)
Hotel you want to leave

Information about children younger than 16 years

Family name
Fist name
Date of birth
Sex
Citizenship (nationality), if you have more than one citizenship, write them all

Payment:

Payment for hotel and the fee are two different transfers on one account.

In purpose of payment write:

"Family name, first name, the fee for conference BIAMS 2006"
"Family name, hotel name, period of residence"

(EUR)

Bank Document

BANK: BANK FOR FOREIGN TRADE ST.PETERSBURG
(ST.PETERSBURG BRANCH)
SWIFT: VTBRRUM2ASPE
SADOVAIA STR. 21,
SANKT-PETERSBURG, 191023 , RUSSIA
IBAN: 407 029 789 070 3100 7001
ACCOUNT: 407 029 786 070 3000 7001
IN FAVOR OFARGUMENT

Terms of payment: Bank expenses should be paid by client.

CONFERENCE Chaiman

S.G. Konnikov, PTI RAS, Russia
konnikov@mail.ioffe.ru

PROGRAM Chaiman

E. Yakimov, Inst. Microelec., Chernogolovka , Russia
yakimov@ipmt-hpm.ac.ru

International Scientific Committee

M. Breese, Natl. Univ. Singapore, Singapore

O. Breitenstein, MPI of Microstructure Physics, Ha l le, Germany
A. Cavallini, Univ.Bologna, Italy

M. Kittler, IHP GmbH, Germany

S.G. Konnikov, PTI RAS, Russia

J. Piqueras, Univ. Compludense , Madrid , Spain

Z.J. Radzimski, SEH America , Vancouver , WA , USA

T. Sekiguchi, National Res. Inst. Metals, Japan

B. Sieber, Univ. Lille, France

J.W. Steeds, Univ. of Bristol , UK

N. Tabet, Univ. King Fahd , Saudi Arabia

H. Tomokage, Fukuoka Univ. Japan

M. Troyon, Universite de Reims-Champagne-Ardenne , France

E. Yakimov, Inst. Microelec., Chernogolovka , Russia

Local Scientific Comitee

M.Zamoryanskaya, Ioffe Physiko-Technical Institute, Russia

A.Tolmachev, Ioffe Physiko-Technical Institute, Russia

R.Sokolov, Ioffe Physiko-Technical Institute, Russia

M.Averchenko, Ioffe Physiko-Technical Institute, Russia

I.Zamoryanskaya (secretary)

Preliminary list of invited talks

Daniel Araujo, France Excitons and defects in homoepitaxial diamand films from cathodoluminescence of p-/p+ samples

Daniela Cavalcoli, University of Bologna, Italy ?Micro- and nano- structures in silicon investigated by DLTS and beam injection methods

Hans-Joachim Fitting, Rostock University, Germany "Multimodal Luminescence Spectra of Ion Beam-implanted Silica

Nicolas Grandjean, Ecole Polytechnique Federale de Lausanne, Switzerland Nanostructures based on GaN".

Martin Kuball, University of Bristol , UK "High spatial resolution micro-Raman thermal mapping of GaN-based electronic devices and their defects"

Manuel J. Romero, National Renewable Energy Laboratory, USA ?Nanoprobes for future generation of photovoltaics

Paul Sellin, University of Surrey, UK

"Ion Beam Induced Charge imaging for the characterisation of wide band gap semiconductors"

Sergei Zaitsev, IPMT RAS, Chernoglovka, Russia Random losses approach and Monte-Carlo simulation of fast electron interaction with solids

Alexander Latyshev, Institute of Semiconductor Physics RAS, Novosibirsk, Russia ?Formation and diagnostic of surface nanostructures by in situ reflection electron microscopy and atomic force microscopy

Proceedings

Proceedings will be published in a regular Journal “Semiconductors”

Proceedings: paragraph 3 cm (top, bottom, left, right). Line spacing 2, Times New Roman, 12 pt

For invited speakers: 10-12 pages of text + 5-6 pages with pictures.

For others: 8 pages of text + 3-4 pages with pictures.

Style of proceedings you can look on site:

http://authors.aps.org/STYLE/index.html

PROGRAM

Sunday, June 11

9:00-10:00	Registration
10:00-10:15	Opening remarks and welcome address
10:15-13:00	Section 1: Nanostructures
10:15-11:00 invited	Formation and diagnostic of surface nanostructures by in situ reflection electron microscopy and atomic force microscopy Alexander Latyshev Institute of Semiconductor Physics RAS, Novosibirsk, Russia
11:00-11:45 invited	Micro- and nano-structures in silicon studied by DLTS and scanning probe methods. D.Cavalcoli¹, A.Cavallini¹, M.Rossi¹, S.Pizzini2 ¹Phys. Dept Univ. Bologna, Italy ²Dept Mater. Sci., Univ. Milano-Bicocca, Italy
11:45-12:10	Coffee break
12:10-12:35	Spatially resolved photoconductivity of single GaN nanowiskers. Anna Cavallini¹, Laura Polenta¹, Marco Rossi¹, Thomas Richter², Michel Marso², Ralph Meijers², Raffaella Calarco², Hans Luth² ¹Physics Department and CNISM, University of Bologna, Bologna, Italy. ²Institute of Thin Films and Interfaces (ISG1) and cni - Centre of Nanoelectronic Systems for Information Technology, Research Center Julich, Germany.
12:35-13:00	Growth and luminescence of ITO nano and microtubes. I. Perdones, A. Cremades, J. Piqueras Departamento de Fisica de Materiales, Facultad de Ciencias Fisicas, Universidad Complutense de Madrid, Spain.
13:00-15:00	Lunch
15:00 -16:35	Section 2: Beam Injection Methods in Device Analysis
15:00-15:45 invited	High spatial resolution micro-Raman thermal mapping of GaN-based electronic devices and their defects. M. Kuball¹, A. Sarua¹, J.W. Pomeroy¹, H. Ji¹, M.J. Uren², T. Martin² ¹ H.H. Wills Physics Lab, University of Bristol, Bristol, UK ²QinetiQ Ltd., Malvern, UK
15:45-16:10	Failure Analysis using Scanning Electron & Laser Beams Induced Current (SELBIC) Measurement Systems. Hajime Tomokage¹, Haruki Sueyoshi¹, Woon Choi², Shin-ichi Takasu³ ¹Dept Electron. Engineer. Computer Sci., Fukuoka University, Japan ²Fukuoka Industry, Science & Technology Foundation, Fukuoka, Japan ³JEOL Ltd., Tokyo, Japan
16:10-16:35	Material-Induced Shunts in Multicrystalline Silicon Solar Cells. O. Breitenstein¹, J. Bauer¹, J.P. Rakotoniaina² ¹Max Planck Institute Microstructure Physics, Halle, Germany ²Q-Cells AG, Thalheim, Germany
16:35-16:55	Coffee break
16:55-18:10	Section 3: New developments
16:55-17:20	Laboratory (S) EXAFS. Alternative for synchrotron ring. K.Ju.Pogrebitsky. A.F. Ioffe Physico-Technical Institute, RAS, Petersburg, Russia.
17:20-17:45	Assessment of spatial distribution, chemical state, and recombination activity of metal clusters in silicon solar cells by synchrotron radiation based x-ray microprobe techniques. A.A.Istratov¹, T.Buonassisi¹, M.Heuer¹, M.D.Pickett¹, E.R.Weber1 and O.F.Vyvenko² ¹University of California, Berkeley, CA 94720, USA ²Institute of Physics, St.-Petersburg State University, St-Petersburg, Russia
17:45-18:10	Diagnostics of films and layers of nanometer thickness using middle energy ion scattering (MEIS) technique. V.V.Afrosimov, R.N.Il'in, V.I.Sakharov, I.T.Serenkov A.F.Ioffe Physico-Technical Institute of Russian Academy of Sciences, Saint-Petersburg, Russia
18:10-19:30	Welcome party
19:30-22:00	Evening round-up tour of the city

Monday, June 12

9:00–11:20	Section 4: Cathodoluminescence
9:00-9:45 invited	Excitons and defects in homoepitaxial diamand films from cathodoluminescence of p-/p+ samples. D. Araujo^1,3, E. Bustarret², M. Kadri², M. Wade², C. Tavares², A. Deneuville2 ¹ GEMPPM, INSA-Lyon, Villeurbanne, France ² LEPES, CNRS, Grenoble, France ³ Dpto. Ciencia de los Materiales, Universidad de Cadiz, Puerto Real, Spain
9:45-10:30 invited	Multimodal Luminescence Spectra of Ion-implanted Silica. H.-J. Fitting¹, Roushdey Salh¹, B. Schmidt2 ¹ Inst. Physics, Univ. Rostock, Germany ² Research Center Rossendorf, Inst. Ion Beam Phys. & Mater. Research, Dresden, Germany
10:30-10:55	Photoluminescence study on defects in multicrystalline silicon. T. Arguirov^1,3, G. Jia^2,3, W. Seifert^1,3, M. Kittler^1,3 ¹ IHP, Frankfurt (Oder), Germany ² BTU Cottbus, Germany ³ IHP/BTU Joint Lab, Cottbus, Germany
10:55-11:20	Cathodoluminescent study of silicon oxide/silicon interface. M.V.Zamoryanskaya and V.I.Sokolov Ioffe Phisico-Teknical Institute, St. Petersburg, Russia
11:20-11:45	Coffee break
11:45-13:00	Section 5: Wide-gap semiconductors
11:45-12:10	Optimization of cathodoluminescnece condition for the study of ZnO nanoparticles T. Sekiguchi¹, B. Dierre¹, XL. Yuan¹, N. Ohashi1 and M. Yokoyama^1,2 ¹ National Institute for Materials Science (NIMS), Tsukuba, Japan ² Application Center, Horiba Ltd., 1-7-8 Higashi-Kanda, Tokyo, Japan
12:10-12:35	Photoinduced transient spectroscopy of defect centres in GaN and SiC. P. Kaminski¹, R. Kozlowski¹, M. Kozubal¹, M. Miczuga², M. Pawlowski^1,2 and J. Zelazko1 ¹ Institute of Electronic Materials Technology, Warszawa, Poland ² Military University of Technology, Warszawa 49, Poland
12:35-13:00	Cathodoluminescence of GaN layers on SiC substrate. Kolesnikova E., Mynbaeva M., Sitnikova A. Ioffe Physico-Technical Institute, , St. Petersburg, Russia
13:00-15:00	Lunch
15:00-16:35	Section 6: Simulation of electron beam interaction with solids and signals in beam injection modes
15:00-15:45 invited	Random losses approach and simulation of fast electron interaction with solids. S. Zaitsev IPMT RAS, Chernogolovka, Russia
15:45-16:10	Monte Carlo model to study the GaAs quantum well by cathodoluminescence. A. Nouiri, and R. Aouati LPCS Laboratory, Dept Physics, Univ. Constantine, Algeria
16:10-16:35	Simulation and measurements of EBIC images of photoconductive elements based on HgCdTe. N.M. Akimova¹, V.V. Krapukhin¹, V.I. Shaevich¹, P.S. Vergeles², E.B. Yakimov2 ¹ Joint Stock Company " Moscow Plant "Sapphir" ² Institute of Microelectronics Technology RAS, Chernogolovka, 142432 Russia
16:35-17:00	Coffee break
17:00-19:00	Poster session

Tuesday, June 13

9:00-17:00	Visit to museum-reserve "Petergof" and one of small palaces, including Lunch
17:00-19:00	Poster session

Wednesday, June 14

9:00-11:00	Section 7: Electron, Light and Ion Beam Induced Methods
9:00-9:45 invited	Ion Beam Induced Charge imaging for the characterization of wide band gap semiconductors. P.J. Sellin Dept Physics, Univ. Surrey, Guildford UK
9:45-10:10	Observation of leakage sites in a HfSiON gate dielectric of a MOSFET device by electron-beam-induced current. J.Chen¹, T. Sekiguchi¹, N. Fukata¹, M. Takase¹, T. Chikyow1 K. Yamabe², R. Hasunuma², Y. Akasaka³, S. Inumiya³, Y. Nara³, K. Yamada4 ¹Advanced Electronic Materials Center, National Institute for Materials Science, Tsukuba, Japan ²University of Tsukuba, Tsukuba, Japan ³Semiconductor Leading Edge Technologies, Inc. Tsukuba, Japan ⁴NanoTech Research Center, Waseda University, Tokyo, Japan
10:10-10:35	In-depth resolution for LBIC technique by two-photon absorption. D. Wan, V. Pouget, A. Douin, D. Lewis, P. Fouillat IXL, CNRS UMR 5818, University Bordeaux 1, 33405 Talence, France
10:35-11:00	Coffee break
11:00-13:00	Section 5: Wide-gap semiconductors
11:00-11:45 invited	Nanostructures based on GaN. N. Grandjean, D. Simeonov, E. Feltin, R. Butte, S. Sonderegger, J.-D. Ganiere, B. Deveaud Ecole Polytechnique Federale de Lausanne (EPFL), IPEQ, Lausanne, Switzerland
11:45-12:10	Defects in Variously Grown GaN Structures Revealed by SEM Using Selective Etching, EBIC and MCL. A.V. Govorkov ¹, A.Y. Polyakov¹, T.G. Yugova¹, N.B. Smirnov¹, E.A. Petrova¹, L.I. Dyakonov¹, A.V. Markov¹, In-Hwan Lee², S.J. Pearton³ ¹Institute of Rare Metals, Moscow, 119017, Moscow, ²School of Advanced Materials Engineering and Research Center for Advanced Materials Development, Engineering College, Chonbuk National University, Chonju, Korea ³ Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611 USA
12-10-12-35	Cathodoluminescence microscopy and spectroscopy of GaN epilayers microstructured using surface charge lithography. C. Diaz-Guerra¹, J. Piqueras¹, O. Vulciuc¹, V. Popa², I.M. Tiginyanu² ¹Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense, Madrid, Spain. ²Lab. Low-Dimensional Semicond. Structures, Instit. Appl. Phys., Academy of Sciences of Moldova, Chisinau, Moldova
12:35-13:00	Strain and non-radiative recombination at single a-type dislocations in GaN measured by cathodoluminescence. M.Albrecht¹, T.Schulz¹, J.Weyher^2,3, B Lucznik³, I.Grzegory³, S.Porowski³ ¹Inst. Kristallzuchtung, Berlin, Germany ²Radboud University Nijmegen, Institute for Molecules and Materials, Appl. Mater. Sci., Nijmegen ³Inst. High Pressure Physics, Polish Academy of Sciences, Warsaw, Poland
13:00-15:00	Lunch
15:00-	Section 8: Scanning probe microscopy
15:00-15:45 invited	Nanodiagnostics and nanomodification of materials by means of Scanning Probe Microscopy, Spectroscopy and Litography. A.O. Golubok Institute for Analytical Instrumentaton RAS, St-Petersburg, Russia
15:45-16:10	Characterization of InAs quantum dots by conductive AFM and near-field EBIC. M. Troyon, K. Smaali, M. Molinari and A. El Hdiy Laboratoire de Microscopies et d'Etude de Nanostructures, Universite de Reims, REIMS, France.
16:10-16:35	AFM study of InGaN Quantum Dot Formation on GaN Surface. M. N. Korytov, P.N.Brunkov, W.V. Lundin, E.E. Zavarin, A.F.Tsatsul'nikov, S.G. Konnikov A.F. Ioffe Physico-Technical Institute RAS, St-Petersburg, Russia
16:35-17:00	STM and LEED studies of the atomically ordered terraced Si(557) surfaces. A.N.Chaika, S.I.Bozhko, A.M.Ionov, A.N.Myagkov, N.V.Abrosimov Institute of Solid State Physics RAS, Chernogolovka, Moscow district, Russia
17:00- 17:20	Coffee break
17:20-	Closing session
17:20-17:45	Properties of Nanostructured ZnO thin films. Mekki¹, N. Tabet¹, N Toumiat²and A. Slimane³ ¹Surface Science Laboratory, Department of Physics, KFUPM 3126, Dhahran, Saudi Arabia ²Silicon development technology unit. 02 Bd. Frantz fanon. BP. 399 Alger gare, Algiers, Algeria ³Ceramics Laboratory, Mentouri University, Constantine 25000, Algeria.
17:45-18:10
18:10-18:35	Combined CL /DLTS investigation of a regular dislocation network formed by silicon wafer direct bonding. X. Yu^1,2, O. Vyvenko^2,4, M. Kittler^1,2, W. Seifert^1,2, T. Mtchedlidze, T. Arguirov^1,2and M. Reiche ¹IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany ²IHP/BTU Joint Lab, Konrad-Wachsmann-Allee 1, 03046 Cottbus, Germany ³MPI fur Mikrostrukturphysik, Weinberg 2, 06120 Halle, Germany ⁴St.-Petersburg State University, 198504 St.-Petersburg, Russia
18:35-	Closing remarks

POSTER SECTION

Poster presentations must be in English on a poster board 1 meter wide and by 1.2 meters high.

Section 1. Nanostructures

1. Structural and optical assessment of tungsten oxide micro and nanostructures grown by thermal deposition methods.

C. Diaz – Guerra and J. Piqueras

Departamento de Fisica de Materiales, Facultad de Fisicas, Universidad Complutense Ciudad Universitaria s/n, E-28040 Madrid, Spain.

2. Si and Ge Nanocluster Formation in Silica Matrix.

E. V. Kolesnikova¹, Roushdey Salh², Lena Fitting³, A. A. Sitnikova¹, M. V. Zamoryanskaya¹, and H.-J. Fitting

¹ Ioffe Physico-Technical Institute, R.A.S., Polyteknicheskaya 26, St. Petersburg 194021, Russia

² Physics Department, University of Rostock, Universitaetsplatz 3, D-18051 Rostock, Germany

³Applied and Engineering Physics, Cornell University, Ithaca NY 14853

3. Microstructure evolution and magnetoresistance of the A-site ordered Ba-doped manganites.
S.V. Trukhanov¹, L.S. Lobanovski¹, M.V. Bushinsky¹, V.A. Khomchenko¹, V.V. Fedotova¹, I.O. Troyanchuk¹, H. Szymczak²

¹ Joint Institute of Solids and Semiconductor Physics, NASB, P. Brovka str. 17, 220072 Minsk, Belarus

² Institute of Physics, Polish academy of sciences, Lotnikov str. 32/46, 02-668 Warsaw, Poland

4. Cathodoluminescence characterization of pseudomorphic modulation-doped quantum wells at high carrier densities.

V.S. Khrustalev, A.V. Bobyl, S.G. Konnikov. M.V. Zamoryanskaya
A.F.Ioffe Physico-Technical Institute, St. Petersburg, Russia

5. Cathodoluminescence studies of C₆₀ fullerene-based films and nanostructures.
Nashchekin A.V., Sokolov R.V., Baryshev S.V.

A.F.Ioffe Physico-Technical Institute, St. Petersburg, Russia

6. Cathodoluminescence Investigation on Silicon Nanowires Fabricated by Thermal Evaporation of SiO.
Guobin Jia^1,2, M. Kittler^1,2, Zixue Su³, Deren Yang ⁴ , Jian Sha³

¹ IHP microelectronics, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

² IHP/BTU Joint Lab, Postfach 101344, 03013 Cottbus, Germany

³ Department of Physics and ⁴ State Key Lab of Silicon Materials, Zhejiang University, Hangzhou 310027, P.R. China

Section 3. New developments

1. High depth resolution sims profiling of delta-doped structures using oxygen polyatomic ions.
B.J. Ber, A.P. Kovarsky, D.Yu. Kazantsev, Yu. G. Musikhin

A.F. Ioffe Physico-Technical Institute, St Petersburg, 194021, Russia

2. Semiconductor-posistor materials on the basis of Li_0.12Na_0.88TayNb_1-yO₃ SS.
M.N. Palatnikov, N.V. Sidorov, O.B. Shcherbina, V.V. Efremov, V.T. Kalinnikov

Institute of Chemistry and Technology of Rare Elements and Mineral Raw Materials, Kola Science Centre RAS, Apatity, Murmansk region, Russia

3. Phase effects in the broad-area laser diodes with curved-groove grating of the distributed feedback or distributed Bragg reflector.

V.V.Dudelev¹, G.S.Sokolovskii¹, A.G.Deryagin¹, V.I.Kuchinskii¹, E.U.Rafailov², S.A.Nikishin³, M.Holtz³, W.Sibbett⁴

¹ Ioffe Physico-Technical Institute, St Petersburg, 194021, Russia

² Division of Electronic Engineering and Physics, University of Dundee, Dundee DD1 4HN, UK

³ Department of Electrical Engineering, Texas Tech University, Lubbock, TX 79409, USA

⁴ School of Physics&Astronomy, University of St Andrews, St Andrews, KY16 9SS UK

4. Laboratory scanning x-ray and electron sources.

V.D. Gelever¹, I.A. Mamonov², D.L. Lilik².

¹OOO ”Diagnostika -M”, Moscow,

² ООО ”X-pro”, St.Petersburg

Section 4. Cathodoluminescence

1. The use of cathodoluminescence for development of durable self-glowing crystals based on solid solutions YPO^4-EuPO₄.
B.E.Burakov¹, V.M.Garbuzov¹, A.A.Kitsay¹, V.A.Zirlin¹, M.A.Petrova¹, Ya.V.Domracheva², M.V.Zamoryanskaya², E.V.Kolesnikova², M.A.Yagovkina², M.P.Orlova³

¹Laboratory of Applied Mineralogy and Radiogeochemistry, V. G. Khlopin Radium Institute, St. Petersburg, Russia;

². F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia;

³Nizhegorodskiy State University, Nizhniy Novgorod, Russia

2. Cathodoluminescence emission study of In₂O₃ films deposited by spray pyrolysis.
G.Korotcenkov, M.Nazarov, M.Ivanov, I.Blinov

Technical University of Moldova, Chisinau, Rep. of Moldova.

3. Cathodoluminescence of laser geterostructures on basis of A^IIB^VI.

A.S.Ivanov, I.V.Sedova, A.A.Sytnikova, S.G.Konnikov, T.B.Popova, M.V.Zamoryanskaya

A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia;

4. Cathodoluminescence properties of yttrium aluminium garnet doped with Eu²⁺ and Eu³⁺ ions.
A.N.Trofimov¹, M.A.Petrova², M.V.Zamoryanskaya¹

¹A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia;

²Khlopin Radium Institute, S.Petersburg, Russia

5. Luminescent properties evolution of natural oxide on porous silicon.

Sokolov R.V., Kolesnikova E.V., Sokolov V.I.

A. F. Ioffe Physico-Technical Institute of Russian Academy of Sciences, St. Petersburg, Russia;

Section 5. Wide-gap semiconductors

1. Experimental analysis of deep and shallow defects in AlN by thermoluminescence in the scanning electron microscope.

M. Albrecht¹ , T.Schulz¹, K. Irmscher¹, C. Hartmann¹, J. Wollweber¹, E. Feltin², N. Gandjean², F. Guillot² and E. Monro

¹Institut fur Kristallzuchtung, Max-Born-Strasse 2, 12489, Berlin, Germany

²LASPE, IQEP, EPFL de Lausanne, CH-1015 Lausanne, Switzerland.

³Equipe Mixte CEA-CNRS-UJF Nanophysique et Semiconducteurs, CEA-Grenoble, 17 rue des Martyrs,38054 Grenoble cedex 9, France

2. Auger diagnostics of N² –nano-bubbles in nitride semiconductors InN and GaAs_1-xN_x.

V.M.Mikoushkin, V.V.Bryzgalov, Yu. S.Gordeev, S.Yu.Nikonov, V.V.Shnitov
Ioffe Physical-Technical Institute RAS, St.-Petersburg, Russia

Section 6. Simulation of electron beam interaction with solids and signals in beam injection modes

1. Monte Carlo calculation of EBIC signal. Study of silicon material.
A. Nouiri¹ and Z. Elateche²

¹LPCS Laboratory, Dep. of Physics, Univ. Mentouri of Constantine, Algeria

²Dep. of Physis, Univ. of Batna, Algeria

2. Mathematical simulation of distribution of minority charge carriers, generated in multy-layer semiconducting structure by a wide electron beam.
I.V. Burylova¹, V.I. Petrov², M.G. Snopova³, M.A. Stepovich¹

¹Tsiolkovsky Kaluga State Pedagogical University, Kaluga, Russia

²Lomonosov Moscow State University, Moscow, Russia

³Kaluga Branch of Bauman Moscow State Technical University, Kaluga, Russia

3. Simulation of energy and charge fluctuations deposited during e-beam exposure.
S.S. Borisov¹, S.I. Zaitsev², E.A. Grachev¹

¹ M.V. Lomonosov Moscow State University, Physical Department, Moscow, Russia,

² Institute of Problems of Microelectronic Technology, Chernogolovka, Moscow region, Russia.

4. Simulation of e-beam penetration throw multilayer structures.
S.S. Borisov¹, S.I.Zaitsev²

¹ M.V. Lomonosov Moscow State University, Physical Department, Moscow, Russia,

² Institute of Problems of Microelectronic Technology, Chernogolovka, Moscow region, Russia.

5. Method for extracting of exafs oscillation function based on the variation principle.
Sharkov M.D., Pogrebitsky K.Ju., Konnikov S.G.

A.F. Ioffe Physico-Technical Institute of RAS, St. Petersburg, Russian Federation.

Section 7. Electron, Light and Ion Beam Induced Methods

1. EBIC characterization of strained Si/SiGe heterostructures.
E.B. Yakimov¹, N. Yarykin¹, R.H. Zhang², G.A. Rozgonyi², M. Seacrist³

¹ Institute of Microelectronics Technology RAS, Chernogolovka, 142432 Russia

² Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695, USA

³ MEMC Electronic Materials, St. Peters, MO 63376, USA.

2. EBIC characterization light emitting structures based on GaN.
N.M. Shmidt¹, P.S. Vergeles², E.B. Yakimov²

¹ A.F.Ioffe Physico-Technical Institute, St. Petersburg, Russia

²Institute of Microelectronics Technology RAS, Chernogolovka, 142432 Russia

3. EBIC measurements of small diffusion length in semiconductor structures.
E.B. Yakimov

Institute of Microelectronics Technology RAS, Chernogolovka, 142432 Russia

4. Applying of EBIV technique for investigation of electrophysical parameters of devices based on HTSC.
S.V. Baryshev, A.V. Bobyl, O.P. Kostyleva

A.F.Ioffe Physico-Technical Institute, St. Petersburg, Russia

Section 8. Scanning probe microscopy

Metrology of linear measurements in nanotechnology.
Yu.A. Novikov, A.V. Rakov, P.A. Todua, Zh. Zhelkobaev

Center for Surface and Vacuum Research

AFM examination of nanolayers, synthesized by the molecular layering method on the surface of manufacturing glasses.

Sosnov E.A.1, Dorofeev V.P.¹, Malkov A.A.1, Malygin A.A.1, Kulikov N.A.², Brusilovsky G.L.

¹St.Petersburg State Institute of Technology (Technical University), Russia

² «Svetlana-Roentgen» JSC, St.Petersburg, Russia

AFM application for in situ study of the adsorption processes.
Sosnov E.A., Belova S.A., Malygin A.A.

St.Petersburg State Institute of Technology (Technical University), Russia

AFM investigation of thin post-baked photoresistive films for microsystem technology application.
Alexandrov S.E.¹, Speshilova A.B.¹, Soloviev Y.V.², Eremeychik O.I.², Volkov V.V.

¹Saint-Petersburg State Polytechnical University

²«Svetlana – Electron device», Saint-Petersburg

Important Deadlines

Abstract deadline	April 1, 2006
Notification of acceptance	April 15 2006
Pre-Registration	May 1, 2006
Hotel reservation	May 1, 2006
Payment of registration fee	May 1, 2006

Contact

Ioffe Physico-Technical Institute, RAS

Polytechnicheskaya 26

St. Petersburg, 194021

Russia

Tel. +7 (812) 247-93-82

Fax.+7 (812) 247-10-17

For any problem, suggestion or information biams06@gmail.com

BIAMS 2006

The 8th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors

Conference Dates

Location

Hotels

HOTELS. Cost in EURO

Transfer

Registration Fee

The fee of participant includes:

The fee of accompanying persons includes:

Visa Support

Information for getting visa:

Information about children younger than 16 years

Payment:

Bank Document

CONFERENCE Chaiman

PROGRAM Chaiman

International Scientific Committee

Local Scientific Comitee

Preliminary list of invited talks

Proceedings

PROGRAM

Sunday, June 11

Registration

Opening remarks and welcome address

Section 1: Nanostructures

Coffee break

Lunch

Section 2: Beam Injection Methods in Device Analysis

Coffee break

Section 3: New developments

Welcome party

Evening round-up tour of the city

Monday, June 12

Section 4: Cathodoluminescence

Coffee break

Section 5: Wide-gap semiconductors

Lunch

Section 6: Simulation of electron beam interaction with solids and signals in beam injection modes

Coffee break

Poster session

Tuesday, June 13

Visit to museum-reserve "Petergof" and one of small palaces, including Lunch

Poster session

Wednesday, June 14

Section 7: Electron, Light and Ion Beam Induced Methods

Coffee break

Section 5: Wide-gap semiconductors

Lunch

Section 8: Scanning probe microscopy

Coffee break

Closing session

Closing remarks

POSTER SECTION

Section 1. Nanostructures

Section 3. New developments

Section 4. Cathodoluminescence

Section 5. Wide-gap semiconductors

Section 6. Simulation of electron beam interaction with solids and signals in beam injection modes

Section 7. Electron, Light and Ion Beam Induced Methods

Section 8. Scanning probe microscopy

Important Deadlines

Contact

The 8^th International Workshop on Beam Injection Assessment of Microstructures in Semiconductors